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FP7 Projects
III-V-MOS







III-V-MOS: Technology CAD for III-V Semiconductor-based MOSFETs.

Coordinator: Prof. Luca Selmi (IU.NET).

Duration: 01/11/2013 - 31/10/2016
Funding: € 2,900,000 (IU.NET share € 642,000).
Participants: Synopsys (Zurich, CH), IBM (Zurich, CH), Global Foundries (Dresden, D), IMEC (Leuven, BE), Quantumwise (Copenhagen, DE), ETH (Zurich, CH) and IU.NET.
IU.NET units involved: University of Bologna, Modena and Reggio Emilia, Udine. The internal scientific director is Prof. David Esseni.
Description: The project concerns the development of TCAD tools for the numerical simulation of CMOS-based devices based on III-V materials, the use of which is potentially expected in the near future for high performance applications. The aim of the project is to develop, validate and transfer to the industry accurate physical models and new simulation methods, which allow for the anticipation of complex quantum mechanisms and quasi-ballistic transport properties that affect the behavior of devices in size nanometer-based semiconductors III-V.
 



E2SWITCH




E2SWITCH: Energy-Efficient Tunnel FETs Switches and Circuits

Coordinator: Prof. Adrian Ionescu (EPFL)

Duration: 01/11/2013 - 30/04/2017
Financing:
€ 4,374,000 (IU.NET share € 350,000)
Participants:
EPFL (Lausanne, CH), IBM (Zurich, CH), IMEC (Leuven, BE), Julich Research Center (Julich D), ETH (Zurich, CH), Cambridge CMOS Sensors , (Lausanne, CH) and IU.NET.
IU.NET units involved:
University of Bologna and Udine. The internal scientific director is Prof. Pierpaolo Palestri.
Description:
The project is concerned with the development of Tunnel FET (TFET) devices and circuits, and aims to optimize these devices using two technology platforms based on SiGe-Ge and III-V semiconductors with CMOS technology compatibility.



GRADE





GRADE: Graphene-based devices and Circuits for RF Applications

Coordinator: Prof. Max Lemme (UniversitÓ di Siegen)

Duration: 01/10/2012 - 30/09/2015
Financing: €. 3.651.000 (IU.NET share € 603.000)
Participants: University of Siegen, (Siegen, D), KTH (Stockholm, S), Infineon Technologies (Regensburg, D), IHP (Frankfurt Oder, D), IEMN (Lille, F), University of Bordeaux Bordeaux, F) and IU.NET.
IU.NET units involved: University of Bologna, Pisa and Udine. The internal scientific director is Prof. Giuseppe Iannaccone.
Description: The design goal is the development of graphene devices, both G-FET and GBT, for high-frequency analog applications.


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