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RESEARCH & PROJECTS
The mission of the Inter-University Consortium for Nanoelectronics (referred to as IUNET) is that of fostering collaboration of Italian University teams active in the fields of Semiconductor Science and Technology, device Physics and Nanoelectronics, with Research Institutes and Industry. This goal is pursued by promoting participation to European Projects, where IUNET acts as a unified interface to the project partners, selects the participating Universities, and nominates an internal coordinator.
The research activity addresses three macro-areas referred to as:


More Moore
advanced CMOS
This activity addresses the leading edge of the CMOS Semiconductor Technology for both logic and memory applications. New device structures are proposed for improved short-channel effects, power consumption, performance and reliability. Also, novel memory concepts like phase-change cells (PCM) are likely to play a major role in future computer architecture.

More than Moore
More Moore
Several semiconductor applications do not require a leading-edge technology for logic but, rather, special devices able to sustain high voltages and to deliver high power to an external load; solar cells for generation of renewable energy, and FETs able to operate at microwave frequencies for the analog treatment of communication signals.
  • Microwave and Hyperfrequencies semiconductor devices (MESFET, HEMT, HBT)
  • Power and smart-power devices
  • High-efficiency solar cells, smart grids and energy harvesting tools
  • Sensors, biosensors and sensor networks
  • Large area electron devices on low-cost organic substrates, or glass (Displays, solar cells, sensors, etc)

Beyond CMOS
More than Moore
This area investigates disruptive technologies based on alternative device concepts, like magnetic, ferroelectric or resistive memory and logic devices, or entirely-new materials like organic semiconductors, graphene and, more generally, two-dimensional materials for large-area Electronics. Also, graphene nanotubes exhibit interesting properties as miniaturized FETs.

  • Novel electron devices based on two-dimensional materials (Graphene, MoS, etc)
  • Alternative memories (Memristors, STTM, etc)

PROJECTS

FP7 Projects

ENIAC Projects

H2020 Pojects

ECSEL projects

FLAG-ERA Project

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